Nujira and RF Micro Devices will be demonstrating the broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.
Using just one RFG1M device with a Coolteq.h module, the RFMD Nujira RF front end transmits over a 728 - 960 MHz band with over 50% efficiency, covering seven of the frequency bands defined for LTE by 3GPP. The results of this broadband GaN-based PA platform surpass competitive wideband Doherty LDMOS solutions. Furthermore, using future GaN devices currently in development at RFMD, the two companies expect to cover the full range of the cellular frequency band from 700 MHz - 2,600 MHz with just three broadband PAs, allowing wireless infrastructure vendors to develop a single, highly-efficient multimode, broadband RF front end that can be deployed to meet various transmission standards anywhere in the world.
Tim Haynes, CEO, Nujira, said, "In partnership with RFMD, we have created a PA which covers the entire 700 MHz 1000 MHz band without compromising on efficiency. Nujira's Coolteq modulators feature the only technology that can deliver this level of efficiency across such a broad bandwidth, extending the Software Defined Radio approach to the high-value power amplifier."
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